STMicroelectronics STP18N65M2, MDmesh™ M2 series, N-Channel MOSFET, 650 V Vdss, 12 A Id, 330 mOhm Rds(on) at 6 A, 10 V, 20 nC Qg, TO-220-3, Through Hole, 150 °C Tj.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 330mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 770 pF @ 100 V |
The STP18N65M2 is an STMicroelectronics N-channel power MOSFET from the MDmesh™ M2 series, built on a planar technology that balances on-resistance and switching losses for 650 V-class offline converters. At 6 A and 10 V, Rds(on) is 330 mOhm.
The TO-220-3 through-hole package mounts into a hole pattern on the PCB. The metal tab is the drain terminal and the primary thermal path.
The part is ROHS3 compliant.
This is the on-resistance at 25 °C junction temperature; expect it to increase by roughly 50–60 % at 125 °C junction, per the normalised curve typical for planar MOSFETs.