STMicroelectronics · MDmesh™ II Plus Series
STMicroelectronics STP18N60M2, N-Channel MOSFET, MDmesh™ II Plus series, 600 V Vdss, 13 A Id, 280 mOhm Rds(on), 21.5 nC Qg, TO-220-3, -55°C to 150°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 6.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 791 pF @ 100 V |
Gate charge is 21.5 nC at 10 V — light enough that a standard gate driver IC can switch it at tens of kilohertz without excessive drive current.
The TO-220-3 through-hole package is field-serviceable — a standard iron and solder wick swap it on site, no hot-air station needed.
