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STMicroelectronics STP18N60DM2 — Discrete Semiconductors

STP18N60DM2 N-Channel 600V 12A MOSFET, TO-220-3

MPNSTP18N60DM2
Active

STMicroelectronics MDmesh™ DM2 N-Channel MOSFET, STP18N60DM2, 600V Vdss, 12A Id, 295mOhm Rds(on) @ 6A 10V, 20nC Qg, TO-220-3 through-hole package.

$2.6100Ref. price · indicative, final on quote
STMicroelectronics STP18N60DM2 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP18N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs295mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 100 V

Product details

Gate charge and switching — the 20 nC number matters for the driver budget

The 800 pF input capacitance at Vds = 100 V confirms the Miller plateau is manageable for a 600 V device in a hard-switched topology.

Package and mounting — TO-220 through-hole, no MSL concern

The through-hole lead form allows manual or wave soldering without moisture sensitivity level (MSL) classification — no bake-out required before assembly. The tab is the drain; the source and gate pins follow the standard TO-220 pinout.

ST lists the STP18N60DM2 as Active (current production). ROHS3 compliant — no exemption expiry concern for lead-free assembly.

Frequently asked questions

Is STP18N60DM2 RoHS compliant?

Yes — listed as ROHS3 Compliant, covering the current EU RoHS exemption categories.

Does STP18N60DM2 come in tape and reel?

The listed package form is Tube. Tape-and-reel availability is not indicated in the record; confirm the preferred packaging with the supplier at quote time.