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STMicroelectronics STP185N10F3 — Discrete Semiconductors

STP185N10F3 N-Channel MOSFET, 100 V, 120 A, 4.8 mOhm

MPNSTP185N10F3
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STMicroelectronics STripFET™ STP185N10F3, N-Channel MOSFET, 100 V Vdss, 120 A Id, 4.8 mOhm Rds(on) at 10 V, TO-220-3, -55°C to 175°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP185N10F3 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.8mOhm @ 60A, 10V

Product details

100 V, 120 A N-channel — the headline numbers

The STP185N10F3: The TO-220 through-hole package handles the dissipation, with a 300 W power limit at the case.

Temperature range — military-grade junction

The gate threshold voltage is 4 V maximum at 250 µA drain current, so a 10 V gate drive is the standard for hard switching — the 4.8 mOhm Rds(on) is measured at that drive level. The ±20 V gate-source maximum gives you some margin for ringing on long gate traces, but you still want a gate clamp or zener if the layout is noisy.

Frequently asked questions

What is the Rds(on) of STP185N10F3?

That is the spec you use for conduction-loss calculations in a hard-switching application.