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STMicroelectronics STP180NS04ZC — Discrete Semiconductors

STP180NS04ZC N-Channel MOSFET, 33V, 120A, 4.2mOhm, Obsolete

MPNSTP180NS04ZC
Obsolete

STMicroelectronics SAFeFET™ series, N-Channel MOSFET, STP180NS04ZC, 33V Vdss, 120A continuous drain at 25°C, 4.2mOhm Rds(on) at 10V, TO-220-3 through-hole, -55°C to 175°C junction temperature.

$0.8800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP180NS04ZC specifications
ParameterValue
SeriesSAFeFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage33 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs4.2mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4560 pF @ 25 V

Product details

Obsolete — sourcing for last-time-buy and replacement

At 40 A the on-state dissipation is roughly 6.7 W, which the 330 W package rating can handle with proper heatsinking.

120 A continuous drain — thermal derating reality

The 120 A continuous drain current is specified at a case temperature of 25°C. In a real enclosure at 85°C ambient, derating is significant — the junction-to-case thermal path and the 330 W dissipation ceiling limit usable current.

TO-220-3 package — mounting and thermal interface

The through-hole TO-220-3 package allows direct mounting to a heatsink with a single screw. The exposed metal tab is the drain, so an insulating pad or thermal compound is needed if the heatsink is at chassis ground.

Frequently asked questions

What is the Rds(on) of STP180NS04ZC?

The maximum Rds(on) is 4.2 mOhm at a drain current of 40 A and a gate-to-source voltage of 10 V. This rating determines conduction losses in the on-state.