STMicroelectronics STripFET™ Series, N-Channel MOSFET, TO-220-3 Through Hole, 55 V Drain-Source, 120 A Continuous Drain, 3.8 mOhm Rds On, -55°C to 175°C Junction.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 330W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.8mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6800 pF @ 25 V |
The STP180N55F3: The gate threshold voltage is 4 V max at 250 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. Gate charge is 100 nC at 10 V, and input capacitance is 6800 pF at 25 V drain-source bias.
The through-hole mount is straightforward for prototyping and rework, though the package limits board density compared to surface-mount alternatives.
A pin-compatible replacement within the STripFET family would need to be evaluated against the original design's voltage, current, and Rds(on) requirements.
The maximum Rds(on) is 3.8 mOhm at 60 A drain current with 10 V gate drive.