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STMicroelectronics STP17N62K3 — Discrete Semiconductors

STP17N62K3 N-Channel MOSFET, 620V 15.5A, TO-220

MPNSTP17N62K3
Obsolete

STMicroelectronics SuperMESH3™ series, STP17N62K3, N-Channel MOSFET, 620 V Vdss, 15.5 A Id, 380 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

$5.4800Ref. price · indicative, final on quote
STMicroelectronics STP17N62K3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP17N62K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15.5A (Tc)
Power dissipation190W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs380mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs94 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 50 V

Product details

Obsolete — sourcing reality and the replacement search

STMicroelectronics lists the STP17N62K3 as obsolete. For new designs, a current-production SuperMESH3 or MDmesh MOSFET with similar ratings avoids the obsolescence risk entirely.

Thermal and drive considerations in a TO-220

The TO-220-3 through-hole package is a standard power package with a metal tab that carries the drain. The 190 W power dissipation rating assumes the case is held at 25°C — in practice, a heatsink with a thermal resistance of 1–2 °C/W is needed to keep the junction below 150°C at full load. The gate threshold voltage is 4.5 V maximum at 100 µA, but the Rds(on) is specified at 10 V gate drive; a 12 V gate supply is the safe choice for minimum on-resistance.

Frequently asked questions

Is STP17N62K3 obsolete?

Yes, STMicroelectronics lists the STP17N62K3 as obsolete.

What is the Rds(on) of STP17N62K3?

The maximum on-resistance is 380 mOhm at a drain current of 7.5 A and a gate-source voltage of 10 V. This figure determines conduction loss in the power stage and is the key parameter for thermal design.