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STMicroelectronics STP16NS25FP — Discrete Semiconductors

STP16NS25FP N-Channel MOSFET, 250V, 16A, TO-220FP

MPNSTP16NS25FP
Obsolete

STMicroelectronics STP16NS25FP, MESH OVERLAY™ N-Channel MOSFET, 250V Vdss, 16A Id, 280mOhm Rds(on) at 10V, 83nC gate charge, TO-220FP full-pack, through-hole.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP16NS25FP specifications
ParameterValue
SeriesMESH OVERLAY™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation40W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs83 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1270 pF @ 25 V

Product details

The TO-220FP fully encapsulated case eliminates the need for an insulating pad when bolted to a grounded heatsink — a practical advantage in metal-enclosure designs where isolation creepage matters.

Input capacitance of 1270 pF at 25 V drain-source gives a rough figure for the gate-drive power budget in high-frequency designs.

Sourcing an obsolete part

STMicroelectronics lists the STP16NS25FP as Obsolete. No direct replacement or successor order code is published in the available records. Buyers should verify stock position before committing a production schedule, as lead times and lot traceability vary with surplus inventory.

Frequently asked questions

What is the Rds(on) of STP16NS25FP?

The maximum on-resistance is 280 mOhm at 8 A drain current with 10 V gate drive.