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STMicroelectronics STP16NS25 — Discrete Semiconductors

STP16NS25 N-Channel MOSFET, 250 V, 16 A, TO-220, Obsolete

MPNSTP16NS25
Obsolete

STMicroelectronics STP16NS25 N-Channel MOSFET, MESH OVERLAY™ series, 250 V drain-source voltage, 16 A continuous drain, 280 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP16NS25 specifications
ParameterValue
SeriesMESH OVERLAY™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation140W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs83 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1270 pF @ 25 V

Product details

Gate charge is 83 nC at 10 V, so the driver needs to source and sink that charge for each switching cycle — budget gate drive current accordingly for the target frequency.

TO-220 — field-swappable with a heatsink

The TO-220-3 through-hole package is a standard for power devices. It mounts into a PCB or onto a heatsink with a single screw. The tab is the drain, so insulating hardware is needed if the heatsink is grounded. Maximum power dissipation is 140 W at case temperature — that figure assumes an infinite heatsink, so real-world dissipation depends on the thermal interface and airflow.

Temperature range and handling

The gate-source voltage is limited to ±20 V absolute maximum.

Frequently asked questions

Is STP16NS25 equivalent to IRF840?

The IRF840 is also a 500 V N-channel MOSFET in a TO-220 package, but the STP16NS25 is a 250 V device. They are not direct equivalents due to the different voltage ratings — the STP16NS25 has a lower Vdss (250 V vs 500 V) and higher current rating (16 A vs 8 A typical for IRF840).