STMicroelectronics STP16NM50N, MDmesh™ II N-Channel MOSFET, 500 V Vdss, 15 A Id, 260 mOhm Rds(on) @ 10 V, TO-220-3, Through Hole, 125 W Power Dissipation.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 260mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 50 V |
It is designed for high-voltage switching applications such as power supplies, adapters, and lighting ballasts, where low on-resistance and fast switching are required.
The 500 V Vdss rating sets the maximum drain-to-source voltage the device can block in the off state, making it suitable for offline flyback and PFC stages in 240 VAC-input designs with derating margin.
The maximum Rds(on) is 260 mOhm at a drain current of 7.5 A and a gate-to-source voltage of 10 V.
For pin-compatible alternatives, a cross-reference search within the STP16N base product number family may yield a currently active device, but that must be verified against the specific application requirements.