STMicroelectronics SuperMESH series, N-Channel MOSFET, 650 V Drain-Source Voltage, 13 A Continuous Drain Current, 500 mOhm Rds(on) at 6.5 A, 10 V, 190 W Power Dissipation, TO-220-3 Through Hole, -55°C to 150°C Operating Temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 500mOhm @ 6.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 89 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2750 pF @ 25 V |
The STP16NK65Z N-channel MOSFET has 500 mOhm on-resistance at 6.5 A, 10 V drive and 89 nC total gate charge at 10 V.
At 6.5 A continuous, the 500 mOhm Rds(on) dissipates about 21 W — well within the 190 W power-dissipation ceiling, but the TO-220 package needs a heatsink sized for that thermal load at the ambient temperature.
Yes, the STP16NK65Z carries an Obsolete lifecycle status.