STMicroelectronics SuperMESH™ series, STP16NK60Z, N-Channel MOSFET, 600 V drain-source, 14 A continuous drain, 420 mΩ Rds(on) at 10 V, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 420mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 86 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2650 pF @ 25 V |
The STP16NK60Z: For existing BOM lines, the only sourcing path is through independent distribution, where surplus and new-old-stock (NOS) inventory is available.
The tab is electrically connected to the drain, so the heatsink must be isolated or the system must tolerate the drain potential on the mounting surface. The 150°C maximum junction temperature sets the derating curve; at 14 A the case temperature must stay well below that to keep the junction within limits.
No official successor is listed by STMicroelectronics. A pin-compatible replacement would need to match the TO-220-3 package, 600 V Vdss, 14 A Id, and 420 mΩ Rds(on) or better. Common cross-shop candidates include the STP16NK60ZFP (fully isolated TO-220FP) or parts from the STP16N60M2 series, but verify the exact specs and footprint before substituting.