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STMicroelectronics STP16N65M2 — Discrete Semiconductors

STP16N65M2 N-Channel MOSFET, 650V 11A TO-220

MPNSTP16N65M2
Active

STMicroelectronics MDmesh™ M2 series N-channel MOSFET, STP16N65M2, TO-220-3, 650 Vdss, 11 A Id, 360 mOhm Rds(on), 110 W Pd.

$2.5500Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ M2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP16N65M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs19.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds718 pF @ 100 V

Product details

650 V switching for power supplies and converters

The STP16N65M2: It is designed for high-voltage switching applications such as AC-DC converters, PFC stages, and auxiliary power supplies where 650 V drain-source breakdown and 11 A continuous drain current are required.

Gate charge and switching speed

These numbers mean the gate driver sees a light capacitive load — a standard 1 A driver can switch the FET in under 20 ns, keeping cross-conduction losses low in hard-switching topologies.

Thermal and environmental range

The maximum gate-source voltage is ±25 V, which gives headroom for gate-drive transients in noisy power stages.

Frequently asked questions

How can I order STP16N65M2 or check availability?

STP16N65M2 is an active STMicroelectronics part.