STMicroelectronics MDmesh M2 N-channel MOSFET, 600V Vdss, 12A Id, TO-220-3, 320mOhm Rds(on) at 10V, 19nC Qg, 110W Pd.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 320mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 700 pF @ 100 V |
The STP16N60M2 is an N-channel 600 V, 12 A MOSFET with 320 mOhm Rds(on) at 10 V.
Through-hole TO-220 package with a metal tab — the 110 W power dissipation rating assumes the tab is bolted to a heatsink with thermal compound. The junction temperature limit is 150 °C.
This is the conduction loss figure to use for thermal design at the nominal operating point.