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STMicroelectronics STP16N50M2 — Discrete Semiconductors

STP16N50M2 N-Channel MOSFET, 500 V, 13 A, TO-220-3

MPNSTP16N50M2
Obsolete

STMicroelectronics STP16N50M2, N-channel MOSFET, MDmesh M2 series, 500 V Vdss, 13 A Id, 280 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

STMicroelectronics STP16N50M2 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP16N50M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs19.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds710 pF @ 100 V

Product details

The STP16N50M2: Total gate charge is 19.5 nC at Vgs = 10 V, a figure that keeps gate-drive losses low in high-frequency topologies like active-clamp flyback or LLC resonant converters. Input capacitance Ciss is 710 pF at Vds = 100 V, which together with the low Qg reflects the MDmesh M2 vertical structure that reduces the Miller plateau.

Package and thermal path — TO-220-3

Housed in a TO-220-3 through-hole package, the STP16N50M2 is designed for mounting to a heatsink via the metal tab, with a maximum power dissipation of 110 W at case temperature Tc.

STMicroelectronics lists the STP16N50M2 as obsolete.

Frequently asked questions

What is a direct replacement for STP16N50M2?

No official direct replacement is recorded in the lifecycle data. For a pin-compatible substitute, look for an N-channel MOSFET in TO-220-3 with a 500 V Vdss rating, 13 A or higher continuous drain current, and an Rds(on) at or below 280 mOhm at 10 V gate drive.