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STMicroelectronics STP165N10F4 — Discrete Semiconductors

STP165N10F4 N-Channel MOSFET, 100V 120A TO-220, Obsolete

MPNSTP165N10F4
Obsolete

STMicroelectronics STP165N10F4, DeepGATE™ STripFET™, N-Channel MOSFET, 100V Vdss, 120A Id, 5.5mOhm Rds(on) @ 10V, 180nC Qg, TO-220-3, -55°C to 150°C.

$1.2099Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP165N10F4 specifications
ParameterValue
SeriesDeepGATE™, STripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation315W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10500 pF @ 25 V

Product details

100 V, 120 A N-Channel — where it fits

The drain-source voltage (100 V) and continuous drain current (120 A at 25 °C case temperature) define a power-handling envelope suited for 48 V to 72 V nominal rails with margin, or lower-voltage high-current stages. With a gate charge of 180 nC at 10 V and input capacitance of 10500 pF at 25 V, the driver stage needs to source enough peak current for fast switching; a standard 10 V gate drive is assumed.

Obsolete — no official successor on record

For new designs, a parametric search against 100 V, 120 A, 5.5 mOhm class N-channel MOSFETs in TO-220 is the practical path.

Frequently asked questions

Is STP165N10F4 obsolete?

Yes, STP165N10F4 carries an Obsolete lifecycle status. No factory support or last-time-buy window remains. Sourcing is through the surplus and broker channel.

What is the Rds(on) of STP165N10F4?

Maximum Rds(on) is 5.5 mOhm at 60 A drain current and 10 V gate-source voltage.