Packaged in a through-hole TO-220-3, it targets high-current switching applications such as DC-DC converters, motor drives, and power supplies where low conduction loss is critical. At this Rds(on) level, a 60 A load dissipates roughly 14.4 W of conduction loss, which the 330 W package power rating can handle with adequate heatsinking. Gate charge is specified at 85 nC at 10 V, a moderate figure for a 120 A device. This influences the gate-driver sizing and switching losses; a driver capable of sourcing 2 A to 3 A peak can switch the gate in the tens of nanoseconds range, keeping crossover losses manageable at moderate frequencies. The 175°C maximum junction allows headroom for thermal cycling in high-current pulsed loads.
Buyers with a BOM line specifying this exact code will need to source through independent distribution or surplus channels. Because no direct replacement is documented by the manufacturer, the procurement path is to qualify a functionally equivalent N-channel MOSFET with similar Rds(on), Vdss, and package footprint — or to secure remaining inventory through the broker market.
Input capacitance is 6750 pF at 25 V drain-source, which influences the gate-drive current required for fast switching. The gate threshold voltage maximum is 4 V at 250 µA, and the maximum gate-source voltage is ±20 V — standard for logic-level gate drives that swing 10 V.