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STMicroelectronics STP160N4LF6 — Discrete Semiconductors

STP160N4LF6 STMicro N-Channel MOSFET, 40V, 120A, TO-220

MPNSTP160N4LF6
Obsolete

STMicroelectronics STP160N4LF6, DeepGATE™ STripFET™ VI, N-Channel MOSFET, 40V Vdss, 120A Id, 2.9mOhm Rds(on) at 10V, TO-220-3, Through Hole, -55°C to 175°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP160N4LF6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id1V @ 250µA (Min)
Rds on (Max) @ id, vgs2.9mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs181 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8130 pF @ 20 V

Product details

40 V, 120 A N-Channel Power MOSFET in TO-220

The 40 V Vdss rating places this part in the low-voltage MOSFET class, suitable for 12 V or 24 V bus systems where margin against transients is needed. The 120 A continuous current rating is at a case temperature of 25°C; real-world derating applies as the junction warms up, and the 150 W power dissipation ceiling (at Tc=25°C) sets the thermal budget for the heatsink. Gate drive voltage is specified at 5 V and 10 V for achieving the minimum and maximum Rds(on). With a gate charge of 181 nC at 10 V, the driver must supply enough peak current for fast switching without excessive switching losses. The TO-220 package with through-hole mounting suits designs where heatsinking through the tab is straightforward.

Lifecycle status and sourcing

Sourcing is limited to the independent distribution market, where remaining inventory or surplus stock can be located.

Frequently asked questions

What is a direct replacement for STP160N4LF6?

No official direct replacement or cross-reference part number is listed by STMicroelectronics for STP160N4LF6. A functionally similar N-channel MOSFET with 40 V Vdss, 120 A Id, and TO-220 package would need to be evaluated for Rds(on), gate charge, and thermal performance to confirm fit.