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STMicroelectronics STP160N4LF6 — Discrete Semiconductors

STMicroelectronics STP160N4LF6

MPNSTP160N4LF6
Obsolete
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STP160N4LF6 Technical Specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id1V @ 250µA (Min)
Rds on (Max) @ id, vgs2.9mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs181 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8130 pF @ 20 V