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STMicroelectronics STP160N3LL — Discrete Semiconductors

STP160N3LL N-Channel MOSFET, 30V 120A TO-220, Active

MPNSTP160N3LL
Active

STMicroelectronics STripFET™ H6 N-Channel MOSFET, STP160N3LL, 30V Vdss, 120A Id, 3.2mOhm Rds(on) at 60A, 10V, 42nC gate charge, TO-220-3 through hole, -55°C to 175°C.

$1.6200Ref. price · indicative, final on quote
STMicroelectronics STP160N3LL datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSTripFET™ H6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP160N3LL specifications
ParameterValue
SeriesSTripFET™ H6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3.2mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3500 pF @ 25 V

Product details

Through-hole power MOSFET for field and bench

The STP160N3LL: The TO-220-3 through-hole package means you can swap it on site with a screwdriver and a socket — no hot-air station, no lab bench.

What the gate charge and capacitance mean for your driver

Gate charge is 42 nC max at 4.5 V, and input capacitance is 3500 pF at 25 V drain. A 4.5 V logic-level gate drive is enough to turn it on hard — the Rds(on) is specified at both 4.5 V and 10 V. The ±20 V gate-source max gives headroom if your gate drive rings on the turn-on edge.

Maximum power dissipation is 136 W at case temperature.

It is ROHS3 compliant. The base product number is STP160, which covers the TO-220 variant; surface-mount siblings in the same STripFET H6 family share the same die but different packages.

Frequently asked questions

How do I get current pricing and availability for STP160N3LL?

Submit an RFQ with your target quantity and delivery window — we source through independent distribution and can provide a competitive quote against your BOM line.