STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 650 V drain-source, 12 A continuous drain, 380 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 983 pF @ 50 V |
The 380 mOhm maximum on-resistance, specified at 6 A and 10 V gate voltage, sets the conduction loss baseline for a 12 A design. Paired with a typical gate charge of 33.3 nC at 10 V, the STP15NM65N suits hard-switched topologies such as flyback and PFC stages where the switching frequency stays moderate — the gate-drive energy per cycle is low enough to keep the driver stage simple.
A functionally similar N-channel MOSFET in the same voltage and current class — 650 V, 12 A range — should be evaluated for pin-compatibility and gate-drive requirements. The TO-220 footprint is common, but parametric differences in Rds(on), gate charge, and switching speed must be verified against the application.
The maximum Rds(on) is 380 mOhm at a drain current of 6 A with a 10 V gate-to-source voltage.