STMicroelectronics FDmesh™ II N-Channel MOSFET, STP15NM60ND, 600 V Vdss, 14 A Id, 299 mOhm Rds(on) @ 7 A, 10 V, TO-220-3, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | FDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 299mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1250 pF @ 50 V |
Input capacitance Ciss is 1250 pF at 50 V Vds — this capacitance drives the turn-on delay and the driver's peak current requirement.
Housed in a through-hole TO-220-3 package, the STP15NM60ND dissipates up to 125 W at the case. The TO-220 tab is the drain connection — the heatsink pad must be electrically isolated or the system must tolerate the drain potential on the heatsink.
Yes, STMicroelectronics lists the STP15NM60ND as obsolete. No official replacement part number has been published.
For a pin-compatible alternative, evaluate other 600 V N-channel MOSFETs in the FDmesh™ II family with similar Rds(on) and gate charge — confirm the footprint and drive voltage match the existing design.