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STMicroelectronics STP15NM60N — Discrete Semiconductors

STP15NM60N N-Channel MOSFET, 600 V, 14 A, MDmesh II, TO-220

MPNSTP15NM60N
Obsolete

STMicroelectronics MDmesh™ II, STP15NM60N, N-Channel MOSFET, 600 V drain-source, 14 A continuous drain, 299 mOhm Rds(on) at 10 V, 37 nC gate charge, TO-220-3 through-hole, -55°C to 150°C junction.

$2.3200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP15NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs299mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1250 pF @ 50 V

Product details

299 mOhm on-resistance and gate charge

The maximum on-resistance (Rds(on)) is 299 mOhm at a drain current of 7 A and a gate drive of 10 V, which is the specified drive voltage for achieving the lowest Rds(on). The total gate charge (Qg) is 37 nC at 10 V, and the input capacitance (Ciss) is 1250 pF at 50 V drain-source — these numbers tell you the switching speed and driver requirements: a 37 nC gate charge means a modest gate driver can switch it fast without excessive power loss, but the 1250 pF input capacitance still needs a clean gate-drive layout to avoid ringing in a hard-switching converter.

No official replacement order code is listed by STMicroelectronics, so cross-referencing by parametric match (600 V, 14 A, 299 mOhm, TO-220) is the practical path for a drop-in substitute.

Frequently asked questions

What is the Rds(on) of STP15NM60N?

The maximum Rds(on) is 299 mOhm at a drain current of 7 A and a gate-source voltage of 10 V.