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STMicroelectronics STP15N95K5 — Discrete Semiconductors

STP15N95K5 N-Channel MOSFET, 950 V, 12 A, TO-220

MPNSTP15N95K5
Active

STMicroelectronics SuperMESH5™ N-Channel MOSFET, STP15N95K5, 950 V Vdss, 12 A continuous drain, 500 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

$4.6200Ref. price · indicative, final on quote
STMicroelectronics STP15N95K5 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP15N95K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs500mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds900 pF @ 100 V

Product details

950 V SuperMESH5™ — what it buys you

The STP15N95K5 is an STMicroelectronics N-channel power MOSFET from the SuperMESH5™ series, built for high-voltage switching in power supplies, PFC stages, and flyback converters. Its 950 V drain-source breakdown voltage provides a solid derating margin for universal-input offline designs where the bulk rail sits near 400 V. The 12 A continuous drain rating at 25 °C case temperature supports moderate-load SMPS primaries and auxiliary converters.

500 mOhm Rds(on) and 40 nC gate charge — switching loss trade-off

That gate charge figure also matters for the gate-drive transformer or bootstrap capacitor sizing — a 10 V drive rail is mandatory to reach the rated Rds(on).

STMicroelectronics lists the STP15N95K5 as current-production (Active). The SuperMESH5™ family is a mature process, so supply should remain stable through standard distribution.

Housed in a standard TO-220-3 through-hole package, the STP15N95K5 mounts to a heatsink via the integral metal tab. Maximum power dissipation is 170 W at the case — that figure assumes the tab is bolted to an infinite heatsink; real-world derating depends on the thermal interface and airflow.

Frequently asked questions

What is the Rds(on) of STP15N95K5?

The maximum on-resistance is 500 mOhm, specified at a drain current of 6 A and a gate-source voltage of 10 V.

Is STP15N95K5 obsolete?

No — STMicroelectronics lists the STP15N95K5 as Active (current production).

Can I replace STP15N80K5 with STP15N95K5?

Both are N-channel SuperMESH5™ MOSFETs in TO-220, but the STP15N95K5 has a higher 950 V drain-source rating versus the STP15N80K5's 800 V. The Rds(on) and gate charge differ between the two voltage grades, so check the switching and thermal performance against your design margins before substituting.