800V, 14A N-channel in TO-220 — SuperMESH5 series
The STP15N80K5 is an 800V drain-source, 14A continuous-drain N-channel power MOSFET from ST's SuperMESH5™ series, housed in a through-hole TO-220 package. This is a current-production part, ROHS3 compliant, aimed at high-voltage switching converters and power supplies where the 375mOhm on-resistance at 7A and 10V gate drive keeps conduction losses manageable.
Switching and drive — 32nC gate charge, 1100pF input capacitance
Gate charge is 32 nC at 10V gate drive — a figure that keeps the gate-drive current requirement moderate for a 100kHz switching frequency. The 1100 pF input capacitance at 100V drain bias sets the switching speed ceiling; paired with a standard gate resistor, the turn-on and turn-off edges stay clean enough for hard-switched topologies without excessive ringing. Maximum gate-source voltage is ±30V, giving margin against overshoot in layouts where the gate-drive loop inductance is not tightly controlled. The 190W power dissipation at case temperature (Tc) assumes a properly heatsinked TO-220 — the junction-to-case thermal path is the limiting factor, not the silicon itself.
Temperature range and mounting
Operating junction temperature spans -55°C to 150°C, covering industrial and automotive under-hood environments where the ambient sees 105°C and the junction climbs from self-heating. The through-hole TO-220 package with a 3.7mm mounting hole suits a bolted heatsink or a clip — no reflow profile needed, just a torque driver.