STMicroelectronics STP15N65M5, MDmesh™ V, N-Channel MOSFET, 650 V Vdss, 11 A Id, 340 mOhm Rds(on), 22 nC Qg, TO-220-3, Through Hole.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 340mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 810 pF @ 100 V |
This is the spec that sets the I²R conduction loss for the BOM — at 5.5 A the dissipation is about 10.3 W, well within the 125 W package limit at case temperature. The low Qg relative to the voltage class keeps gate-drive losses manageable at switching frequencies above 100 kHz.
Maximum Rds(on) is 340 mOhm at 5.5 A drain current with 10 V gate drive.