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STMicroelectronics STP15N60M2-EP — Discrete Semiconductors

STP15N60M2-EP N-Channel MOSFET, 600 V, 11 A, TO-220

MPNSTP15N60M2-EP
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STMicroelectronics STP15N60M2-EP, MDmesh™ M2-EP series, N-channel MOSFET, 600 V Vdss, 11 A continuous drain, 378 mOhm Rds(on) at 10 V gate drive, 17 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$1.9400Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ M2-EP
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP15N60M2-EP specifications
ParameterValue
SeriesMDmesh™ M2-EP
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs378mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds590 pF @ 100 V

Product details

600 V, 11 A N-channel power switch in TO-220

It is built on a planar stripe technology that balances on-resistance and switching losses for hard-switching topologies. The through-hole TO-220 package suits conventional heatsink mounting in power supplies, lighting ballasts, and industrial converters where board-level thermal management is straightforward.

On-resistance and gate charge — the switching loss trade-off

This is the conduction loss figure a designer uses to size the heatsink — at 11 A the I²R loss reaches roughly 46 W, leaving about 64 W of the 110 W rated dissipation for switching losses. Total gate charge is 17 nC at 10 V, a moderate value that keeps gate-driver current below 20 mA at 100 kHz switching frequency. Input capacitance is 590 pF at 100 V drain-source bias, which together with the gate charge defines the switching energy. The low capacitance relative to the 600 V rating means the device can be driven with a standard bootstrap gate-driver IC without excessive cross-conduction during the Miller plateau.

Temperature range and industrial qualification

This qualifies the STP15N60M2-EP for outdoor telecom rectifiers, solar inverters, and motor drives where ambient temperatures can exceed 70°C.

No official second-source or pin-compatible cross-reference is published by STMicroelectronics for this specific MDmesh M2-EP variant.

Frequently asked questions

Can I use STP15N60M2-EP as a replacement for STP15N60M2?

The base product number is STP15, indicating the same die family. The EP suffix typically denotes enhanced performance or a specific process variant. Without a published cross-reference from STMicroelectronics, verify the Rds(on), gate charge, and switching characteristics match your application before substituting. The pinout and TO-220 footprint are identical.

Is STP15N60M2-EP RoHS compliant?

Yes, the STP15N60M2-EP is ROHS3 compliant, meeting the latest EU directive requirements for lead-free and restricted-substance compliance.