STMicroelectronics STripFET™ II, STP150NF55, N-Channel MOSFET, 55V Vdss, 120A Id, 6mOhm Rds(on) at 10V, TO-220-3, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 190 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4400 pF @ 25 V |
STMicroelectronics lists the STP150NF55 as obsolete. Buyers should qualify any alternate or replacement part for fit, footprint, and thermal performance before committing the BOM.
No special MSL concerns: the TO-220 is a leaded through-hole part, so moisture sensitivity is not a reflow risk the way it is with surface-mount packages.
This low Rds(on) minimizes conduction losses in high-current switching applications.