STMicroelectronics STP150N10F7AG — Discrete Semiconductors
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STMicroelectronics / Discrete Semiconductors

STMicroelectronics STP150N10F7AG N-Channel MOSFET, 110A

MPN STP150N10F7AG
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STMicroelectronics STripFET F7 series, N-Channel MOSFET, STP150N10F7AG, 100V Vdss, 110A Id, 4.2mOhm Rds(on), TO-220-3, Tube.

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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case TO-220-3
Output / Current 100 V

Full Technical Specifications

15 Parameters
STP150N10F7AG specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs127 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9000 pF @ 50 V
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Technical Details & Description

The STP150N10F7AG: The on-resistance is 4.2 mOhm maximum at 55 A with a 10 V gate drive. That's a low figure for a 100 V TO-220 part — it keeps conduction losses under 0.5 W at 10 A RMS, which is what lets you get away with a modest clip-on heatsink in a ventilated enclosure. The gate charge is 127 nC at 10 V, so the driver needs to source about 1.3 A peak to switch it in 100 ns; a standard 1 A gate-driver IC will be marginal for fast hard-switching at high frequency.

Switching-loss trade-off vs the STP110N10F7 sibling

The closest peer in the same F7 family is the STP110N10F7, also a 100 V N-channel in TO-220. The STP110N10F7 has a higher Rds(on) of 7 mOhm at 55 A, but a lower gate charge of 60 nC at 10 V. So the STP150N10F7AG wins on conduction loss — about 40 % lower — at the cost of roughly double the gate-drive energy per switching cycle. For a 50 kHz hard-switched buck converter, the 150's higher Qg adds about 0.5 W to the driver dissipation; for a line-frequency motor contactor or a soft-switched LLC stage, the extra Qg is irrelevant and the lower Rds(on) is pure gain.

Frequently asked questions

What is STP150N10F7AG's listed FET type and packaging?

The STP150N10F7AG is an N-Channel MOSFET (Metal Oxide) supplied in a Tube of TO-220-3 through-hole packages.

Will STP150N10F7AG drop into a board designed for STP110N10F7?

Yes — both are TO-220-3 parts with the same pinout (gate, drain, source) and same 100 V Vdss rating. The STP150N10F7AG has a lower Rds(on) of 4.2 mOhm vs 7 mOhm, so it will run cooler at the same current. The higher gate charge (127 nC vs 60 nC) means the gate-driver must supply more peak current to maintain the same switching speed; check that the existing driver can source the extra charge per cycle.

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