650 V N-channel MOSFET for high-voltage switching
The device comes in a TO-220 through-hole package, suitable for board-level mounting with a heatsink. Typical applications include offline power supplies, PFC stages, flyback converters, and other high-voltage switched-mode circuits.
New designs should not use this part.
Key ratings for the BOM decision
The 650 V drain-source rating sets the voltage class for offline power supplies up to about 400 V DC bus. Total gate charge of 45 nC at 10 V gives a reasonable switching speed for a 650 V device — the gate driver should be sized to deliver that charge within the desired switching interval. Input capacitance of 1300 pF at 50 V Vds is moderate, so the switching node rise time will be manageable with a standard gate resistor. Maximum junction temperature is 150 °C, and power dissipation is 125 W at the case — a heatsink is mandatory for any continuous load above a few amps.