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STMicroelectronics STP14NK60ZFP — Discrete Semiconductors

STP14NK60ZFP N-Channel MOSFET, 600 V, 13.5 A, TO-220FP

MPNSTP14NK60ZFP
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STMicroelectronics SuperMESH™ N-Channel MOSFET, STP14NK60ZFP, 600 Vdss, 13.5 A continuous drain current, 500 mOhm Rds(on) at 10 V gate drive, TO-220 Full Pack through-hole package.

$4.4900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP14NK60ZFP specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13.5A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs500mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2220 pF @ 25 V

Product details

The STP14NK60ZFP: The TO-220 Full Pack (TO-220FP) package has a fully isolated tab — no insulating washer or pad needed between the device and the heatsink, which simplifies mounting and reduces assembly time on a rework bench. The through-hole leads survive multiple solder cycles if you need to pull and replace it.

The gate threshold is 4.5 V max at 100 µA. Gate charge is 75 nC at 10 V.

Thermal and operating range

Maximum power dissipation is 40 W at case temperature — derate from there when the case runs hotter than 25°C. The TO-220FP's isolated tab means the thermal pad is the heatsink interface, not the drain; plan the mounting accordingly.

It is a standard-production part available through the independent distribution channel.

Frequently asked questions

What is the Rds(on) of STP14NK60ZFP?

The gate threshold is 4.5 V max at 100 µA, so a 10 V gate drive is needed to reach the rated Rds(on).