800 V N-Channel MOSFET with MDmesh K5 technology
The 22 nC typical gate charge keeps switching losses manageable in hard-switched topologies.
What the 445 mOhm Rds(on) means for your BOM
At 6 A, dissipation in the channel alone is roughly 16 W, which combined with switching losses must stay within the 130 W package limit. The 10 V drive voltage is the sweet spot for minimum Rds(on); driving with a lower gate voltage increases resistance and losses, so budget a 10 V gate supply or a bootstrap circuit in the gate driver stage.
22 nC gate charge — switching speed and drive loss
A total gate charge of 22 nC at 10 V means the gate driver sees a modest capacitive load, keeping drive losses low even at higher switching frequencies. The 620 pF input capacitance at 100 V Vds confirms a relatively small Miller plateau, which helps maintain clean switching edges and reduces dead-time requirements in half-bridge configurations.
