STMicroelectronics STripFET™ II, N-Channel MOSFET, 55 V Drain-Source Voltage, 80 A Continuous Drain Current, 8 mOhm Rds(on) at 10V, TO-220-3 Through Hole, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 142 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5300 pF @ 25 V |
The STP141NF55: Rds(on) is 8 mOhm at 40A, 10V. Gate charge is 142 nC at 10V.
The TO-220-3 through-hole package allows direct mounting to a heatsink with a single screw, which is essential given the 300W maximum power dissipation at the case. The 5300 pF input capacitance at 25V Vds means the gate drive loop should be kept tight to avoid ringing.
The maximum on-resistance is 8 mOhm at a drain current of 40A with a 10V gate drive. This low Rds(on) minimizes conduction losses in high-current switching applications.
Yes. The 55V drain-source voltage rating provides ample margin for 12V systems. The 10V gate drive is easily generated from a 12V rail, and the 4V typical threshold ensures the device turns on fully with logic-level gate signals when driven at 10V.
A pin-compatible N-channel MOSFET in the TO-220 package with similar or better Rds(on) and current rating would need to be selected based on your specific gate drive voltage, switching frequency, and thermal budget. Contact us with your requirements for cross-reference assistance.