75 V, 120 A N-channel in TO-220
The STP140NF75: Packaged in a through-hole TO-220-3, it suits high-current switching and linear applications where the board-side thermal management can handle the 310 W dissipation ceiling.
Conduction and switching parametrics
Gate charge totals 218 nC at 10 V, which means the gate driver must source about 2.2 A to switch the FET in 100 ns; a standard 1 A driver will stretch the switching edge and increase crossover loss. The ±20 V gate-to-source rating gives margin for ringing on long gate traces, but the 10 V drive level for minimum Rds(on) is the practical operating point.
Thermal and operating envelope
The 310 W power dissipation rating is at case temperature 25°C — derate linearly with the junction-to-case thermal resistance. In a real 85°C ambient with a heatsink, the usable continuous current drops to roughly 80 A before hitting the thermal limit.