STP140NF55

STMicroelectronics

STMicroelectronics STripFET™ II series, STP140NF55, N-Channel MOSFET (Metal Oxide), 55 V drain-source, 80 A continuous drain, 8 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

STMicroelectronics STP140NF55
Download datasheet (PDF)
[IN STOCK] In Stock: 12 pcs
$3.16/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STP140NF55 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs142 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 25 V

Technical details

The 55 V Vdss gives comfortable headroom on 12 V and 24 V rails, but it is tight for 48 V systems — budget derating if you push past 40 V steady-state. The 80 A continuous drain is rated at case temperature 25°C; real-world current is derated by the 300 W power dissipation ceiling and the thermal resistance of your heatsink. Gate charge is 142 nC at 10 V, so your gate driver needs to source and sink that charge quickly to avoid slow switching edges and extra dissipation.

Through-hole TO-220. Gate threshold 4 V max at 250 µA. Junction temperature -55°C to 175°C.

STP140NF55
[ALLOC] verified
Quote