80 V, 90 A N-channel in TO-220 — the conduction-loss story
The STP140N8F7 is an 80 V, 90 A N-channel MOSFET from STMicroelectronics' DeepGATE™ and STripFET™ VII series, housed in a through-hole TO-220-3 package. The headline figure is the 4.3 mOhm maximum Rds(on) at 45 A with a 10 V gate drive — this sets the conduction loss floor for the power stage and directly drives heatsink sizing in a 200 W dissipation budget at the case.
Gate charge and input capacitance — sizing the driver
With 96 nC total gate charge at 10 V and 6340 pF input capacitance at 40 V drain, the gate-driver must supply roughly 96 nC per switching cycle — a 1 A driver charges the gate in under 100 ns, but the switching loss rises with the Miller plateau duration. The 4.5 V maximum gate threshold at 250 µA means the device is fully enhanced with a 10 V drive, but a 5 V logic-level gate signal may not saturate the channel to the rated Rds(on) — the drive voltage spec calls for 10 V to achieve the minimum on-resistance.
Thermal and temperature grade — where it runs
The junction temperature range spans -55°C to 175°C, placing it in the industrial-to-automotive thermal class — suitable for under-hood electronics, motor-drive cabinets, and power supplies that see sustained ambient heat. The 200 W power dissipation at the case temperature means the TO-220 tab must be bolted to a heatsink with low thermal resistance; without one, the junction reaches the 175°C limit at a fraction of the rated current.
Lifecycle and compliance — no obsolescence risk
ROHS3 compliance is confirmed, covering the EU RoHS exemption list through 2024 — no restricted substances above the threshold limits.