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STMicroelectronics STP140N6F7 — Discrete Semiconductors

STP140N6F7 MOSFET, N-Channel 60 V 80 A TO-220, 3.5 mOhm

MPNSTP140N6F7
Active

STMicroelectronics STripFET™ STP140N6F7, N-Channel MOSFET, 60 V Vdss, 80 A Id, 3.5 mOhm Rds(on) @ 40 A, 10 V, 55 nC Qg, TO-220-3, Through Hole, 175 °C TJ.

$2.4100Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSTripFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP140N6F7 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation158W (Tc)
Operating temperature175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3100 pF @ 10 V

Product details

Conduction and switching parametrics

With a total gate charge of 55 nC at 10 V and an input capacitance of 3100 pF at 10 V drain-source, the STP140N6F7 presents a moderate gate-drive load — suitable for standard gate-driver ICs in hard-switched topologies up to several tens of kilohertz. Maximum power dissipation is 158 W at the case temperature, and the junction temperature rating of 175 °C allows operation in thermally demanding environments such as motor drives and power supplies.

Package and mounting for the BOM

The through-hole mounting suits wave-solder assembly and field replacement in industrial equipment.

Frequently asked questions

Can STP140N6F7 replace IRFZ44N?

Both are 60 V N-channel MOSFETs in TO-220 packages, but the STP140N6F7 offers a lower 3.5 mOhm Rds(on) versus the IRFZ44N's typical 17.5 mOhm, and a higher 80 A continuous drain rating. Pin-compatibility should be verified against the specific gate-drive voltage and switching frequency of your circuit.