STP140N6F7

STMicroelectronics · STripFET™ Series

STMicroelectronics STripFET™ STP140N6F7, N-Channel MOSFET, 60 V Vdss, 80 A Id, 3.5 mOhm Rds(on) @ 40 A, 10 V, 55 nC Qg, TO-220-3, Through Hole, 175 °C TJ.

STMicroelectronics STP140N6F7
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Technical specifications

STP140N6F7 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation158W (Tc)
Operating temperature175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3100 pF @ 10 V

Technical details

Conduction and switching parametrics

With a total gate charge of 55 nC at 10 V and an input capacitance of 3100 pF at 10 V drain-source, the STP140N6F7 presents a moderate gate-drive load — suitable for standard gate-driver ICs in hard-switched topologies up to several tens of kilohertz. Maximum power dissipation is 158 W at the case temperature, and the junction temperature rating of 175 °C allows operation in thermally demanding environments such as motor drives and power supplies.

Package and mounting for the BOM

The through-hole mounting suits wave-solder assembly and field replacement in industrial equipment.

STP140N6F7
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