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STMicroelectronics STP140N4F6 — Discrete Semiconductors

STMicroelectronics STP140N4F6 N-Channel MOSFET

MPNSTP140N4F6
Active

STMicroelectronics STP140N4F6, STripFET™ F6, N-Channel MOSFET, 40V Vdss, 80A Id, 168W Pd, TO-220-3, Through Hole, Tube.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP140N4F6 specifications
ParameterValue
SeriesSTripFET™ F6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation168W (Tc)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3

Product details

Typical applications include switching power supplies, DC-DC converters, motor drives, and automotive 12 V/24 V load switching where low-voltage, high-current switching is required.

Gate-drive voltage flexibility — 4.5 V or 10 V drive

The STP140N4F6 supports a gate-drive voltage range from 4.5 V to 10 V (Max Rds On specified at both 4.5 V and 10 V). This dual rating means the MOSFET can be driven directly from a 5 V logic-level gate driver for reduced component count, or from a standard 10 V rail to achieve the lowest possible Rds(on) for minimum conduction losses. The ±20 V maximum gate-source voltage provides headroom against overshoot on the gate drive line.

Thermal and package considerations for the TO-220 build

The through-hole mounting (TO-220-3) suits point-to-point wiring or PCB mounting with a tab soldered to a copper island.

Frequently asked questions

What is the drain current rating of STP140N4F6?

The continuous drain current (Id) at 25°C case temperature is 80 A, with a maximum power dissipation of 168 W at case temperature.