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STMicroelectronics STP13NM60N — Discrete Semiconductors

STP13NM60N N-Channel MOSFET, 600V, 11A, TO-220-3

MPNSTP13NM60N
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STMicroelectronics STP13NM60N, MDmesh™ II N-Channel MOSFET, 600V Vdss, 11A Id, 360mOhm Rds(on) at 10V, 30nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$4.7100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP13NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 50 V

Product details

600 V, 11 A N-channel — MDmesh™ II for hard-switching converters

The STMicroelectronics STP13NM60N is a 600 V, 11 A N-channel power MOSFET built on the MDmesh™ II technology platform. It is designed for high-voltage switching applications such as power-factor-correction (PFC) boost stages, offline flyback and forward converters, and motor-drive inverters where low conduction and switching losses matter.

That translates to roughly 11 W conduction loss at full rated current — within the 90 W package dissipation limit but requiring a decent heatsink or forced airflow for continuous operation. The 30 nC total gate charge is modest for a 600 V device, so the gate-drive power penalty stays low even at 100 kHz switching.

The TO-220 package with through-hole mounting simplifies heatsink attachment and field replacement in chassis-mount assemblies.

Lifecycle — still an active production part

For new designs it remains a valid choice, and for existing BOM lines there is no urgency to qualify a substitute. The MDmesh™ II family has broad distribution coverage, so replenishment through independent channels is straightforward.

Frequently asked questions

What is the Rds(on) of STP13NM60N?

The maximum on-resistance is 360 mOhm at 5.5 A drain current with 10 V gate drive.

STP13NM60N vs STP13NM60FP — what is the difference?

The STP13NM60FP is the full-pack (isolated) TO-220FP variant of the same die. The FP version has a fully insulated package back, eliminating the need for a mica washer or thermal pad when mounting to a grounded heatsink. The STP13NM60N (standard TO-220) has the drain electrically connected to the metal tab. Electrically the two share the same 600 V / 11 A / 360 mOhm ratings, but the FP package adds about 1°C/W to the junction-to-case thermal resistance. Choose the FP when you want a single-screw mount without an isolation spacer; choose the standard TO-220 when you need the lowest possible the