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STMicroelectronics STP13NM50N — Discrete Semiconductors

STP13NM50N N-Channel MOSFET, 500 V, 12 A, TO-220

MPNSTP13NM50N
Obsolete

STMicroelectronics STP13NM50N, MDmesh™ II N-Channel MOSFET, 500 V Vdss, 12 A Id, 320 mOhm Rds(on) @ 10 V, 30 nC Qg, TO-220-3, Through Hole, -55°C to +150°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP13NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation100W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs320mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds960 pF @ 50 V

Product details

What the 500 V / 12 A rating means for your power stage

The STP13NM50N: Its 500 V drain-source breakdown voltage and 12 A continuous drain current target offline power supplies, power-factor-correction (PFC) stages, and 400 VDC bus converters where the TO-220 package can be bolted to a heatsink. At 12 A, expect I²R losses around 46 W — well within the 100 W package dissipation limit at a 25°C case temperature, but derating is required as the case heats up.

Sourcing an obsolete part — what to expect

STMicroelectronics lists the STP13NM50N as Obsolete. The MDmesh™ II generation has been superseded by later MDmesh series, but pin-compatible alternatives exist across ST's own portfolio and from competitors — verify the gate-drive voltage and switching speed match your design.

The TO-220-3 through-hole package is a standard power-device footprint. The tab is the drain terminal, so the heatsink must be electrically isolated or the system must tolerate a live tab.