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STMicroelectronics STP13NK60ZFP — Discrete Semiconductors

STP13NK60ZFP N-Channel MOSFET, 600V, 13A, TO-220FP

MPNSTP13NK60ZFP
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STMicroelectronics SuperMESH™ N-channel MOSFET, 600 V drain-source, 13 A continuous drain, 550 mOhm Rds(on) at 10 V gate drive, TO-220 Full Pack through-hole package, -55 to 150 °C junction temperature.

$4.9300Ref. price · indicative, final on quote
STMicroelectronics STP13NK60ZFP datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP13NK60ZFP specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs550mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2030 pF @ 25 V

Product details

600 V, 13 A N-channel MOSFET in a fully isolated package

The 600 V Vdss rating suits universal-input AC-DC converters. The 13 A continuous current is specified at the case; the 35 W maximum power dissipation in the TO-220FP package means real-world current is derated by switching frequency, gate drive, and heatsink thermal resistance.

The input capacitance of 2030 pF at 25 V drain-source is a factor in the gate drive power budget and switching speed.

The base product number STP13 identifies the broader family; the ZFP suffix denotes the TO-220 Full Pack variant with the isolated tab.

Frequently asked questions

What is the difference between STP13NK60ZFP and STP13NK60Z?

The ZFP suffix indicates the TO-220 Full Pack (TO-220FP) package with an isolated mounting tab. The STP13NK60Z uses the standard TO-220 package where the tab is electrically connected to the drain. The Full Pack version eliminates the need for an insulating washer between the device and the heatsink.