600 V, 13 A — where this MOSFET fits in a power stage
The STP13NK60Z is an N-channel 600 V, 13 A MOSFET from ST's SuperMESH™ series, built on a planar stripe layout that balances on-resistance with rugged avalanche energy. The 150 W maximum power dissipation means the thermal path to the heatsink must be low-inductance and well-greased — a TO-220 bolted to a modest fin can shed that loss if the junction stays under 150°C.
On-resistance and gate drive — the loss budget
At that operating point, conduction loss is I²R = (4.5 A)² × 0.55 Ω ≈ 11 W — about 7% of the 150 W dissipation budget, leaving headroom for switching loss. A 10 V drive is recommended; the 4.5 V threshold at 100 µA means a logic-level gate signal can turn it on, but Rds(on) will be higher than the 550 mOhm spec — the 10 V condition is the one to design to for lowest loss.
Package and thermal integration
The TO-220-3 through-hole package with a standard TO-220 supplier device package mates with common heatsink clips and PCB layouts.