STMicroelectronics SuperMESH N-Channel MOSFET, STP13NK50Z, 500V Vdss, 11A Id, 480mOhm Rds(on) at 10V, TO-220-3, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 480mOhm @ 6.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1600 pF @ 25 V |
The STP13NK50Z is an STMicroelectronics SuperMESH N-channel power MOSFET in a through-hole TO-220-3 package.
The maximum gate threshold is 4.5 V at 100 µA drain current, so a logic-level 5 V signal will not fully enhance the channel — the Rds(on) will be significantly higher than the 480 mOhm figure. Designs that use this part need a gate driver capable of sourcing 10 V.
A parametric search for a 500 V N-channel MOSFET in TO-220 with similar Rds(on) and gate charge is the practical cross-reference approach.
The maximum Rds(on) is 480 mOhm at a drain current of 6.5 A with a 10 V gate-to-source drive.