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STMicroelectronics STP13N95K3 — Discrete Semiconductors

STP13N95K3 N-Channel MOSFET, 950 V, 10 A, TO-220

MPNSTP13N95K3
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STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, Through Hole, TO-220-3, 950 V drain-source, 10 A continuous drain, 850 mOhm on-resistance at 10 V drive, -55 to 150 °C junction range.

$7.1700Ref. price · indicative, final on quote
STMicroelectronics STP13N95K3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP13N95K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs850mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1620 pF @ 100 V

Product details

950 V N-channel MOSFET in TO-220 — what it does

The STMicroelectronics STP13N95K3 is a 950 V N-channel power MOSFET from the SuperMESH3™ series, housed in a TO-220 through-hole package. The device targets high-voltage offline switching applications such as AC-DC converters, power factor correction stages, and auxiliary power supplies where a 950 V blocking voltage provides margin for mains-derived rails with surge transients.

Input capacitance of 1620 pF at 100 V drain-source is typical for this voltage class; it governs the drive power required at the switching frequency.

Temperature range and thermal design

Frequently asked questions

What is the datasheet for STP13N95K3?

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What is the pinout of STP13N95K3?

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What is the best replacement for STP13N95K3 in a TO-220 package?

Maintenance techs need drop-in replacements for failed units without redesign.