Switching and loss profile
The STP13N80K5: Gate charge of 29 nC at 10 V is low for an 800 V device, which eases the gate-driver burden in hard-switched topologies like flyback or two-switch forward converters. Maximum power dissipation is 190 W at case temperature.
STMicroelectronics lists the STP13N80K5 as an active product in the SuperMESH5™ series, with ROHS3 compliance confirmed. For a BOM that requires dual sourcing, ST offers several 800 V N-channel TO-220 MOSFETs in the same SuperMESH5™ family with different current and Rds(on) tiers — the STP13N80K5 sits at the 12 A / 450 mOhm point.