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STMicroelectronics STP13N80K5 — Discrete Semiconductors

STP13N80K5 MOSFET N-CH 800V 12A TO-220, SuperMESH5

MPNSTP13N80K5
Active

STMicroelectronics SuperMESH5™ N-Channel MOSFET, 800V Vdss, 12A Id, 450mOhm Rds(on), 29nC Qg, TO-220-3, Through Hole.

$3.7200Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP13N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs450mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds870 pF @ 100 V

Product details

Switching and loss profile

The STP13N80K5: Gate charge of 29 nC at 10 V is low for an 800 V device, which eases the gate-driver burden in hard-switched topologies like flyback or two-switch forward converters. Maximum power dissipation is 190 W at case temperature.

STMicroelectronics lists the STP13N80K5 as an active product in the SuperMESH5™ series, with ROHS3 compliance confirmed. For a BOM that requires dual sourcing, ST offers several 800 V N-channel TO-220 MOSFETs in the same SuperMESH5™ family with different current and Rds(on) tiers — the STP13N80K5 sits at the 12 A / 450 mOhm point.

Frequently asked questions

Is STP13N80K5 RoHS compliant?

Yes, the STP13N80K5 is ROHS3 compliant per the manufacturer's status.

Can STP13N80K5 be used in a switching power supply?

Yes. The 800 V Vdss rating gives headroom for universal-input AC-DC converters, and the 29 nC gate charge and 450 mOhm Rds(on) suit hard-switched topologies like flyback, PFC boost, and two-switch forward converters up to about 150 W output, depending on thermal management.