STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, Drain to Source Voltage 650 V, Continuous Drain Current 10A (Tc), Rds On 430mOhm @ 5A 10V, Gate Charge 17nC @ 10V, TO-220-3 Through Hole.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 430mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 590 pF @ 100 V |
The STP13N65M2 is rated for 650 V drain-source voltage.
The TO-220-3 through-hole package with the metal tab on the back is the workhorse vertical-mount power package. The tab is the drain terminal — it must be electrically isolated from the heatsink unless the system uses a shared drain bus.
Submit an RFQ with your target quantity and delivery timeline to receive a current quote — no stock-holding or price figure is published here.