STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, TO-220-3 Through Hole, 600 V Vdss, 11 A continuous drain at 25°C, 365 mOhm Rds(on) at 10 V, 19 nC gate charge.
| Parameter | Value |
|---|---|
| Series | MDmesh™ DM2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 365mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 730 pF @ 100 V |
The STP13N60DM2: Total gate charge is 19 nC at 10 V. Input capacitance is 730 pF at 100 V drain bias.
Maximum power dissipation is 110 W at case temperature, but the real-world limit is set by the heatsink and ambient conditions.
The STP13N60M2 is a related MDmesh M2 series part from STMicroelectronics in the same TO-220 package. The DM2 variant uses a later-generation trench-gate process that typically yields lower on-resistance per die area. Check the specific Rds(on) and gate charge figures for the M2 variant against your switching-loss budget before substituting.
The datasheet specifies a maximum Rds(on) of 365 mOhm at 5.5 A drain current and 10 V gate drive. Typical values are lower, but the maximum figure is the one to use for worst-case conduction loss calculations in your thermal design.