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STMicroelectronics STP130NH02L — Discrete Semiconductors

STP130NH02L STripFET N-Channel MOSFET, 24V 90A TO-220

MPNSTP130NH02L
Obsolete

STMicroelectronics STripFET™ STP130NH02L, N-Channel MOSFET, 24 V Vdss, 90 A Id, 4.4 mOhm Rds(on) @ 10 V, TO-220-3, Through Hole, -55°C to 175°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP130NH02L specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs4.4mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4450 pF @ 15 V

Product details

The TO-220 through-hole package makes it a practical choice for breadboard prototyping and hand-soldering — no hot-air rework needed, just a soldering iron and a heatsink.

At 45 A, that's about 8.9 W of dissipation at the on-resistance alone — manageable with a decent heatsink, but the 150 W package limit means you have headroom for switching losses. The drive voltage range of 5 V to 10 V lets you use either a standard 10 V gate drive for minimum Rds(on) or a logic-level 5 V drive if your controller can't swing higher — though at 5 V the Rds(on) will be higher than the 4.4 mOhm figure, so check the typical curve in the datasheet.

If you are designing a new board, look for a current-production alternative; if you are repairing an existing unit, this part may still be found on the spot market.

Frequently asked questions

What is the Rds(on) of STP130NH02L?

The maximum Rds(on) is 4.4 mOhm at a drain current of 45 A and a gate-to-source voltage of 10 V.