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STMicroelectronics STP130N6F7 — Discrete Semiconductors

STP130N6F7 N-Channel MOSFET, 60 V, 80 A, 5 mOhm Rds(on)

MPNSTP130N6F7
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STMicroelectronics STripFET™ F7 N-Channel MOSFET, 60 V Vdss, 80 A Id, 5 mOhm Rds(on) at 10 V, 42 nC Qg, TO-220-3, -55 to 175 °C.

$2.1100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP130N6F7 specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation160W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 25 V

Product details

60 V, 80 A STripFET F7 — where it lands in a power stage

The STP130N6F7: Rated at 60 V drain-source and 80 A continuous drain current at the case, it targets switching and linear-mode applications in bus architectures — DC-DC converters, motor pre-drive stages, load switches, and battery protection circuits in industrial and automotive-adjacent environments.

The 5 mOhm Rds(on) at 40 A, 10 V is the headline number a designer checks against the I²R loss budget. At 40 A the conduction loss is 8 W — the 160 W package dissipation ceiling leaves margin, but the TO-220 needs a heatsink or forced air above a few amps continuous. The 42 nC gate charge is moderate — a typical 1 A gate driver can switch it in under 50 ns, which keeps cross-conduction losses manageable in a half-bridge at 50 kHz.

80 A continuous — the thermal reality

The 80 A continuous drain current is specified at case temperature 25 °C. The wide -55 to 175 °C operating range suits high-ambient environments like engine bays, industrial ovens, or sealed power supplies where the local air temperature hits 85 °C or more.

Through-hole TO-220-3 with the standard 2.54 mm pitch. The tab is the drain.

Frequently asked questions

What is the Rds(on) for STP130N6F7 at 10 V?

The maximum Rds(on) is 5 mOhm at 40 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations in a switching power stage.

What is the maximum drain current for STP130N6F7?

80 A continuous at case temperature 25 °C. Real-world current is lower and depends on heatsinking and ambient temperature — the junction must stay below 175 °C.