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STMicroelectronics STP130N10F3 — Discrete Semiconductors

STMicroelectronics STP130N10F3 N-Channel MOSFET, 100 V

MPNSTP130N10F3
Obsolete

STMicroelectronics STripFET™ III series, N-Channel MOSFET, TO-220-3, 100 V Vdss, 120 A continuous drain, 9.6 mOhm Rds(on) at 60 A, 10 V, 57 nC gate charge, -55°C to 175°C junction temperature.

$3.5000Ref. price · indicative, final on quote
STMicroelectronics STP130N10F3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP130N10F3 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9.6mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs57 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3305 pF @ 25 V

Product details

The STP130N10F3: It is rated for a drain-source voltage of 100 V and a continuous drain current of 120 A at 25°C case temperature, housed in a through-hole TO-220-3 package.

For BOM lines that still specify this exact number, supply is limited to surplus and broker-channel inventory. The 120 A continuous rating and 9.6 mΩ Rds(on) at 10 V are the key parametrics to match when qualifying a replacement — any candidate should also be a 100 V N-channel in TO-220 with similar gate charge to keep the drive circuit unchanged. When sourcing from the independent channel, verify date codes and request traceability documentation to avoid counterfeit risk on a discontinued high-power part.

Frequently asked questions

What is the replacement for STP130N10F3?

STMicroelectronics has not published an official successor order code for the STP130N10F3. A replacement must be qualified by matching the 100 V Vdss, 120 A continuous drain rating, 9.6 mΩ Rds(on) at 10 V, and 57 nC gate charge in a TO-220 package. Without an official cross-reference, the buyer should evaluate pin-compatible N-channel MOSFETs from the same STripFET family or from competitors like Infineon's OptiMOS or onsemi's PowerTrench series that meet the same parametric window.

What is the RDS on of STP130N10F3?

The maximum on-resistance is 9.6 mΩ at a drain current of 60 A and a gate-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in the design.