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STMicroelectronics STP12NM60N — Discrete Semiconductors

STP12NM60N N-Channel MOSFET, 600V 10A, TO-220

MPNSTP12NM60N
Obsolete

STMicroelectronics STP12NM60N, MDmesh™ II N-Channel MOSFET, 600V Vdss, 10A Id, 410mOhm Rds(on) @ 5A 10V, 30.5nC Qg, TO-220-3 through-hole, -55°C to 150°C junction.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP12NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs410mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs30.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds960 pF @ 50 V

Product details

600 V / 10 A — the power-stage fit

Its 600 V drain-to-source breakdown voltage and 10 A continuous drain current rating make it suitable for offline power supplies, AC-DC converters, and motor drive circuits where the bus voltage can reach several hundred volts.

Switching losses — gate charge and capacitance budget

With a typical gate charge of 30.5 nC at 10 V and input capacitance of 960 pF at 50 V drain bias, this MOSFET demands a moderate gate drive. The 30.5 nC charge means a 1 A gate driver can switch it in about 30 ns, keeping crossover losses manageable in the 50-100 kHz range.

TO-220 — the through-hole workhorse

The metal tab provides a low thermal resistance path to a heatsink — essential for dissipating the 90 W maximum. The through-hole leads are easy to hand-solder or rework, but the package is larger than surface-mount alternatives like D2PAK, so board space is a consideration.

There is no direct pin-compatible replacement listed in the official documentation, so a redesign with a current-generation MDmesh™ or similar 600 V MOSFET may be the practical path for new designs.

Frequently asked questions

What is the direct replacement for STP12NM60N?

STMicroelectronics has not published an official direct replacement for the STP12NM60N. For new designs, consider a current-generation 600 V N-channel MOSFET from the MDmesh™ series or another manufacturer — the replacement will need to match the 600 V Vdss, 10 A Id, and TO-220 package. A parametric search against these ratings will yield viable alternatives.